features: high gain bandwidth product f t = 10 ghz typ @ i c = 4ma ? low noise figure 1.6 db typ at 1 ghz 2.0 db typ at 2 ghz high gain |s 21 | 2 = 18.1 db @ 1 ghz 12.8 db @ 2 ghz dice, plastic, hermetic and surface mount packages available performance d ata: electrical characteristics (t a = 25 o c) npn low noise silicon microwave transistor bipolarics, inc. part number BRF504 symbol parameters & conditions unit min. typ. max. v ce =8v, i c = 4 ma unless stated v cbo collector-base voltage 10 v v ceo collector-emitter voltage 10 v v ebo emitter-base voltage 1.5 v i c cont collector current 8 ma t j junction temperature 200 o c t stg storage temperature -65 to 150 o c symbol parameters rating units absolute maximum ratings: insertion power gain: f = 1.0 ghz, i c = 4 ma 17.5 i c = 8 ma 18.1 f = 2.0 ghz, i c = 4ma 12.8 i c = 8 ma 12.6 nf noise figure: v ce =8v, i c = 0.8ma f = 1.0 ghz db 1.6 z s = 50 ? c cb collector base capacitance: v cb = 8v f = 1mhz pf 0.07 i cbo collector cutoff current : v cb =8v a 0. 2 v ce = 8v, i c = 4 ma f t |s 21 | 2 description and applications: bipolarics' BRF504 is a high performance silicon bipolar transistor intended for use in low noise application at vhf, uhf and microwave frequencies. high performance low noise performance can be realized at 2 ma or less making the BRF504 an excellent choice for battery application. from 4 ma to over 8ma, f t is nominally 10 ghz. maximum recommended continuous current is 16 ma. a broad range of packages are offered including sot-23, sot-143, plastic and ceramic 0.0 85 " micro-x, 0. 0 70 " stripline and unencap- sulated dice. gain bandwidth product ghz 10 p 1d b power output at 1db compression: f = 1.0 ghz dbm 10 g 1d b gain at 1db compression: f = 1.0 ghz dbm 15 h fe forward current transfer ratio: f = 1mhz 50 100 250 i ebo emitter cutoff current : v eb =1v a 1.0 product data sheet
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